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| Previous Datasheet Index Next Data Sheet Bulletin I25167/B ST110S SERIES PHASE CONTROL THYRISTORS Stud Version Features Center gate Hermetic metal case with ceramic insulator (Also available with glass-metal seal up to 1200V) International standard case TO-209AC (TO-94) Threaded studs UNF 1/2 - 20UNF2A Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling 110A Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I2 t @ 50Hz @ 60Hz V DRM /V RRM tq TJ typical ST110S 110 90 175 2700 2830 36.4 33.2 400 to 1600 100 - 40 to 125 Units A C A A A KA2s KA2s V s C case style TO-209AC (TO-94) To Order Previous Datasheet ST110S Series ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code 04 08 ST110S 12 14 16 Index Next Data Sheet V DRM /V RRM, max. repetitive peak and off-state voltage V 400 800 1200 1400 1600 VRSM , maximum nonrepetitive peak voltage V 500 900 1300 1500 1700 IDRM /I RRM max. @ TJ = TJ max mA 20 On-state Conduction Parameter I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current ST110S 110 90 175 2700 2830 2270 2380 Units Conditions A C A DC @ 85C case temperature t = 10ms t = 8.3ms A t = 10ms t = 8.3ms t = 10ms KA2s t = 8.3ms t = 10ms t = 8.3ms KA s 2 180 conduction, half sine wave No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. It 2 Maximum I t for fusing 2 36.4 33.2 25.8 23.5 I t 2 Maximum I t for fusing 2 364 0.90 t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV) ), TJ = TJ max. V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 V TM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current V 0.92 (I > x IT(AV)),TJ = T J max. (16.7% x x IT(AV) < I < x IT(AV) ), TJ = TJ max. m 1.81 1.52 600 mA 1000 T J = 25C, anode supply 12V resistive load V (I > x IT(AV) ),TJ = TJ max. Ipk= 350A, TJ = TJ max, tp = 10ms sine pulse 1.79 Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current td tq Typical delay time Typical turn-off time 500 2.0 s 100 A/s ST110S Units Conditions Gate drive 20V, 20, tr 1s TJ = TJ max, anode voltage 80% VDRM Gate current 1A, di g /dt = 1A/s Vd = 0.67% VDRM, TJ = 25C ITM = 100A, TJ = TJ max, di/dt = 10A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, tp = 500s To Order Previous Datasheet Index Next Data Sheet ST110S Series Blocking Parameter dv/dt IRRM IDRM Maximum critical rate of rise of Max. peak reverse and off-state leakage current ST110S 500 off-state voltage 20 Units Conditions V/s mA TJ = TJ max. linear to 80% rated VDRM TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM IGM +VGM -VGM Maximum peak gate power ST110S 5 1 2.0 20 Units Conditions W A TJ = TJ max, t p 5ms TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t p 5ms PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. IGT DC gate current required to trigger 180 90 40 VGT DC gate voltage required to trigger 2.9 1.8 1.2 IGD VGD DC gate current not to trigger DC gate voltage not to trigger V 5.0 MAX. 150 3.0 10 0.25 mA V V mA TJ = TJ max, t 5ms p TJ = - 40C TJ = 25C TJ = 125C TJ = - 40C TJ = 25C TJ = 125C Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = TJ max Thermal and Mechanical Specification Parameter TJ Tstg Max. operating temperature range Max. storage temperature range ST110S -40 to 125 -40 to 150 0.195 Units Conditions C RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, 10% DC operation K/W 0.08 15.5 (137) 14 (120) Mounting surface, smooth, flat and greased Non lubricated threads Nm (lbf-in) Lubricated threads wt Approximate weight Case style 130 g See Outline Table TO - 209AC (TO-94) To Order Previous Datasheet ST110S Series Index Next Data Sheet RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle 180 120 90 60 30 Sinusoidal conduction Rectangular conduction Units 0.035 0.041 0.052 0.076 0.126 0.025 0.042 0.056 0.079 0.127 K/W Conditions TJ = TJ max. Ordering Information Table Device Code ST 1 11 2 0 3 S 4 16 5 P 6 0 7 V 8 9 1 2 3 4 5 6 7 - Thyristor Essential part number 0 = Converter grade S = Compression bonding Stud Voltage code: Code x 100 = VRRM (See Voltage Rating Table) P = Stud base 20UNF threads 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) 8 - V = Glass-metal seal (only up to 1200V) None = Ceramic housing (over 1200V) 9 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection) To Order Previous Datasheet Index Next Data Sheet ST110S Series Outline Table GLASS METAL SEAL 16.5 (0.65) MAX. 8.5 (0.33) DIA. 4.3 (0.17) DIA 2.6 (0.10) MAX. 7) 9.5 M IN . (.025 s.i.) RED SILICON RUBBER 170 (6.69) 157 (6.18) RED CATHODE WHITE GATE C.S. 0.4 mm 2 (.0006 s.i.) 20 C.S. 16mm 2 (0. 7 FLEXIBLE LEAD 9) MI N. (0 . 3 Fast-on Terminals AMP. 280000-1 REF-250 70 (2.75) MIN. 215 (8.46) RED SHRINK 29 (1.14) MAX. WHITE SHRINK 12.5 (0.49) MAX. 10 (0.39) 23.5 (0.93) MAX. DIA. 21 (0.83) MAX. SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX. Case Style TO-209AC (TO-94) All dimensions in millimeters (inches) CERAMIC HOUSING 16.5 (0.65) MAX. 7) MI N. (0.3 8.5 (0.33) DIA. 4.3 (0.17) DIA 2.6 (0.10) MAX. C.S. 16mm 2 RED SILICON RUBBER 157 (6.18) 170 (6.69) RED CATHODE WHITE GATE C.S. 0.4 mm 2 (.0006 s.i.) (.025 s.i.) 215 (8.46) 70 (2.75) MIN. RED SHRINK 29 (1.14) MAX. WHITE SHRINK 10 (0.39) 22.5 (0.88) MAX. DIA. 12.5 (0.49) MAX. 21 (0.83) MAX. SW 27 1/2"-20UNF-2A 29.5 (1.16) To Order MAX. 20 (0. 7 FLEXIBLE LEAD 9) MI N. 9.5 Previous Datasheet ST110S Series Outline Table GLASS-METAL SEAL FLAG TERMINALS 23.5 DIA. (0.93) MAX. 1.5 (0.06) DIA. Index Next Data Sheet 5.2 (0.20) DIA. 46 (1.81) 49 (1.93) (0.39) 10 29 (1.14) MAX. 7.5 (0.30) 12.5 (0.49) 21(0.83) MAX. MAX. 1/2"-20UNF-2A SW 27 (0.65) 16.5 2.4 (0.09) 29.5 (1.16) CERAMIC HOUSING FLAG TERMINALS 22.5 DIA. (0.89) MAX. 1.5 (0.06) DIA. 10 (0.39) 5.2 (0.20) DIA. 10 (0.39) Case Style TO-208AD (TO-83) All dimensions in millimeters (inches) 46 (1.81) 49 (1.93) 7.5 (0.30) 12.5 (0.49) 21(0.83) MAX. MAX. 1/2"-20UNF-2A SW 27 29 (1.14) MAX. 2.4 (0.09) To Order 29.5 (1.16) (0.65) 16.5 10 (0.39) Previous Datasheet Index Next Data Sheet ST110S Series Maximum Allowab le Case T emperature (C) Maximum Allowable Cas T e emperature (C) 130 S 110S S T eries RthJC (DC) = 0.195 K/ W 120 130 S 110SS T eries RthJC (DC) = 1.95 K/ W 120 110 Conduction Angle 110 Conduction Period 100 100 30 60 90 30 60 90 90 120 180 0 DC 90 120 180 120 80 0 20 40 60 80 100 Averag e On-state Current (A) Fig. 1 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 160 140 120 100 80 60 Conduction Angle 80 20 40 60 80 100 120 140 160 180 Average On-s tate Current (A) Fig. 2 - Current Ratings Characteristics 180 120 90 60 30 RMSLimit S R th 0. 2 3 0. W K/ K/ W 0. 5K /W 0.6 K/ W 0. 4 W K/ A .1 =0 W K/ elt -D 0.8 K/ W 1K /W a R 1.2 KW / 40 20 0 0 20 40 60 80 100 25 120 50 75 100 125 Avera ge On-state Current (A) Maximum Allowable Ambient T emperature (C) S 110SS T eries T = 125C J Fig. 3 - On-state Power Loss Characteristics Maximum Average On-s tate Power Los (W) s 220 200 180 160 140 120 MS 100 R Limit 80 60 40 20 0 0 20 40 60 80 100 120 140 160 180 25 50 75 100 125 Average On-s tate Current (A) Maximum Allowable Amb ient T emperature (C) S 110SS T eries T = 125C J Conduction Period DC 180 120 90 60 30 A hS Rt 2 0. W K/ W = K/ W 0. 4K /W 0.5 K/ W 0.6 K/ W 0.8 K/ W 1K /W 1.2 K/ 0.3 Fig. 4 - On-state Power Loss Characteristics /W 1K 0. el -D ta R To Order Previous Datasheet ST110S Series Peak Half S Wa ve On-state Current (A) ine Index Next Data Sheet Peak Half S Wave On-s ine tate Current (A) 2400 2200 2000 1800 1600 1400 1200 1000 1 At Any R ated Load Condition And With R ated VRR App lied Following S urge. M Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s 2800 Maximum Non R epetitive S urge Current Vers Pulse T us rain Duration. Control 2600 Of Conduction May Not Be Maintained. 2400 Initial T = 125C J No Voltage Reapplied 2200 R ated VRRMReapplied 2000 1800 1600 1400 1200 1000 0.01 S 110S S T eries 0.1 1 10 S 110S S T eries 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse T rain Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current 10000 Ins ntaneous On-s ta tate Current (A) T = 25C J 1000 T = 125C J 100 S 110S S T eries 10 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Ins tantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics Tra nsie nt Therma l Imp ed a nc e Z thJC (K/ W) 1 S ea dy S te Va lue t ta R thJC = 0.195 K/ W (DC Ope ra tion) 0.1 0.01 ST110S S rie s e 0.001 0.001 0.01 0.1 Sq ua re Wa ve Pulse Duration (s) 1 10 Fig. 8 - Thermal Impedance ZthJC Characteristic To Order Previous Datasheet Index Next Data Sheet ST110S Series 100 Instantaneous Gate Voltage (V) R ectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) R ommended load line for ec <=30% rated di/dt : 10V, 10ohms 10 tr<=1 s (b) T j=-40 C (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a) tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms T j=25 C T j=125 C 1 VGD IGD 0.1 0.001 0.01 (1) (2) (3) (4) Device: S 110SS T eries 0.1 1 F requenc y Limited by PG(AV) 10 100 Ins tantaneous Gate Current (A) Fig. 9 - Gate Characteristics To Order |
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